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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 4, 2011, Pages

Aging mechanism of the native oxide on silicon (100) following atmospheric oxygen plasma cleaning

(2) Williams, Thomas S a Hicks, Robert F a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION OF ORGANIC MOLECULES; ADSORPTION PROCESS; AGING MECHANISM; ATMOSPHERIC OXYGEN; CLEANING METHODS; FIRST-ORDER RATE CONSTANTS; HYDROCARBON CHAIN LENGTH; HYDROPHILIC STATE; HYDROXYL GROUPS; INTERNAL REFLECTIONS; NATIVE OXIDES; ORGANIC CONTAMINANT; OXYGEN PLASMAS; RADIO FREQUENCIES; RATE DEPENDENT; SI(100) SURFACE; SILANOL GROUPS; SILICON (100); SILICON NATIVE OXIDES; WATER CONTACT ANGLE;

ADSORPTION; ATMOSPHERIC PRESSURE; CONTACT ANGLE; HELIUM; HYDROCARBONS; HYDROGEN; INFRARED SPECTROSCOPY; LIQUID NITROGEN; RATE CONSTANTS;

OXYGEN;

EID: 79960495750 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3597436 Document Type: Article

Times cited : (16)

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