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Volumn 476, Issue 1, 2005, Pages 51-58

Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

Author keywords

Electrochemical impedance; Growth kinetics; SC1; SC2; Silicon oxide; Silicon surface treatment

Indexed keywords

CHARACTERIZATION; CHARGE TRANSFER; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; ELECTROLYTES; GROWTH KINETICS; HYDROGEN BONDS; HYDROGEN PEROXIDE; INFRARED SPECTROSCOPY; MIXTURES; OXIDATION; PH EFFECTS; SEMICONDUCTOR GROWTH; SILICON; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 13844317790     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.09.008     Document Type: Article
Times cited : (18)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.