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Volumn 476, Issue 1, 2005, Pages 51-58
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Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces
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Author keywords
Electrochemical impedance; Growth kinetics; SC1; SC2; Silicon oxide; Silicon surface treatment
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Indexed keywords
CHARACTERIZATION;
CHARGE TRANSFER;
ELECTRIC IMPEDANCE;
ELECTROCHEMISTRY;
ELECTROLYTES;
GROWTH KINETICS;
HYDROGEN BONDS;
HYDROGEN PEROXIDE;
INFRARED SPECTROSCOPY;
MIXTURES;
OXIDATION;
PH EFFECTS;
SEMICONDUCTOR GROWTH;
SILICON;
SURFACE TREATMENT;
X RAY PHOTOELECTRON SPECTROSCOPY;
DIELECTRIC LAYERS;
ELECTROCHEMICAL IMPEDANCE;
SC1;
SC2;
SILICON OXIDES;
SILICON SURFACE TREATMENT;
SEMICONDUCTING FILMS;
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EID: 13844317790
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.09.008 Document Type: Article |
Times cited : (18)
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References (28)
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