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Physical Review Letters

Volumn 97, Issue 12, 2006, Pages

Temperature-driven change in the unstable growth mode on patterned GaAs(001)

(4) Tadayyon Eslami, T a,c Kan, H C b,c Calhoun, L C c Phaneuf, R J a,c

a UNIVERSITY OF MARYLAND (United States)

b Bldg 142 (United States)

c LABORATORY FOR PHYSICAL SCIENCES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DIFFUSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

ADATOM DIFFUSION; ANISOTROPIC BARRIERS; GROWTH MODE CHANGE; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33748792260 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.97.126101 Document Type: Article

Times cited : (19)

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