Through Silicon Via (TSV) defect investigations using lateral emission microscopy

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1413-1416

  Cassidy, C ^a   Teva, J ^a   Kraft, J ^a   Schrank, F ^a  

^a AMS AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATED CIRCUIT; 3D VIEWPOINT; AIR-SILICON INTERFACE; ANGLE OF INCIDENCE; DEFECT LOCALIZATIONS; EMISSION MICROSCOPY; EXPERIMENTAL SETUP; INFRA RED; LEAKAGE MECHANISM; OPTICAL PATH; PHOTOEMISSION MICROSCOPY; REFLECTING SURFACE; THROUGH SILICON VIAS; THROUGH-SILICON-VIA;

THREE DIMENSIONAL;

DEFECTS;

EID: 79960436153     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.116     Document Type: Conference Paper

References (9)

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2. X. Gagnard, and T. Mourier Through Silicon Via: from the CMOS imager sensor wafer level package to the 3D integration Microelectron Eng 87 2010 470 476
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