Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1517-1520

  Yang, Yu ^a,b   Bender, Hugo ^a   Arstila, Kai ^a   Swinnen, Bart ^a   Verlinden, Bert ^b   Wolf, Ingrid De ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PLASMA INTERACTIONS; COPPER; ELECTRIC BATTERIES; FOCUSED ION BEAMS; ION BEAMS; ION BOMBARDMENT; NETWORKS (CIRCUITS); NONMETALS; QUALITY ASSURANCE; RELIABILITY; SAFETY FACTOR; SILICON; THREE DIMENSIONAL; WATER POLLUTION;

CYCLING TESTS; FAILURE LOCATIONS; FOCUSED-ION-BEAM; HIGH TEMPERATURE STORAGE; OPEN SITES; OPTICAL PROFILOMETRY; PASSIVE VOLTAGE CONTRAST; STACKED CIRCUIT; SURFACE CONTAMINATIONS; THROUGH-SILICON-VIAS;

FAILURE ANALYSIS;

EID: 50249140605     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.036     Document Type: Article

References (6)

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3. Dixit P., Miao J., and Preisser R. Fabrication of high aspect ratio 35 m pitch through-wafer copper interconnects by electroplating for 3-D wafer stacking. Electrochem Solid-State Lett 9 (2006) G305-G308
4. Yoon S.W., et al. Reliability studies of a through via silicon stacked module for 3D microsystem packaging. ECTC (2006) 1449-1453
5. Tanaka N., et al. Mechanical effects of copper through-vias in a 3D die-stacked module. ECTC (2002) 473-479
6. Chen K.-N., et al. Structure, design and process control for Cu bonded interconnects in 3D integrated circuits. IEDM (2006) 1-4