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Volumn , Issue , 2011, Pages 1588-1595

Zero-level packaging for (RF-)MEMS implementing TSVs and metal bonding

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; CAPPING SUBSTRATES; CRITICAL STRESS; EXTERNAL PRESSURES; FABRICATION PROCESS; METAL BONDING; MICRO-BUMPS; PACKAGING TECHNOLOGIES; THERMO-MECHANICAL; VERTICAL FEEDTHROUGHS; ZERO-LEVEL PACKAGING;

EID: 79960388942     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898723     Document Type: Conference Paper
Times cited : (11)

References (17)
  • 3
    • 33750602045 scopus 로고    scopus 로고
    • Optimization of 0-level packaging for RF-MEMS devices
    • Boston, USA, June 8-12
    • Jourdain A, Rottenberg X, Carchon G. and Tilmans H. A. C, "Optimization of 0-level packaging for RF-MEMS devices", proc. Transducers'03, Boston, USA, June 8-12, 2003, pp. 1915-1918
    • (2003) Proc. Transducers'03 , pp. 1915-1918
    • Jourdain, A.1    Rottenberg, X.2    Carchon, G.3    Tilmans, H.A.C.4
  • 7
    • 84897565015 scopus 로고    scopus 로고
    • RF MEMS switch with wafer level package utilizing frit glass bonding
    • Milan, Italy, 23-27 September
    • Fujii M., Kimura I., Satoh T. and Imanaka K., "RF MEMS switch with wafer level package utilizing frit glass bonding", proc. 32nd European Microwave Conference EUMC2002, Milan, Italy, 23-27 September 2002 (vol. 1), pp. 279-281
    • (2002) Proc. 32nd European Microwave Conference EUMC2002 , vol.1 , pp. 279-281
    • Fujii, M.1    Kimura, I.2    Satoh, T.3    Imanaka, K.4
  • 11
    • 0022736627 scopus 로고
    • Interface effects of SIPOS passivation
    • June
    • Tong D. W., John L. Benjamin and W. R. van Dell, "Interface effects of SIPOS passivation", IEEE Trans. on El. Dev., Vol. ED-33, No. 6, June 1986, pp. 779-787.
    • (1986) IEEE Trans. on El. Dev. , vol.ED-33 , Issue.6 , pp. 779-787
    • Tong, D.W.1    Benjamin, J.L.2    Van Dell, W.R.3
  • 12
    • 79960418230 scopus 로고    scopus 로고
    • New lowcost thermally stable process to reduce silicon substrate losses: A way to extreme frequencies for high volume Si technologies
    • Detcheverry C., van Noort W. D., Havens R. J., "New lowcost thermally stable process to reduce silicon substrate losses: A way to extreme frequencies for high volume Si technologies", proc. IEDM2004, pp.
    • Proc. IEDM2004
    • Detcheverry, C.1    Van Noort, W.D.2    Havens, R.J.3
  • 16
    • 1942488266 scopus 로고    scopus 로고
    • Surface-passivated high-resistivity silicon substrates for RFICs
    • April
    • Rong B., Burghartz J. N., Nanver L. K., Rejaei B., and van der Zwan M., "Surface-passivated high-resistivity silicon substrates for RFICs", IEEE El. Dev. Lett., vol. 25 (4), April 2004, pp. 176-178.
    • (2004) IEEE El. Dev. Lett. , vol.25 , Issue.4 , pp. 176-178
    • Rong, B.1    Burghartz, J.N.2    Nanver, L.K.3    Rejaei, B.4    Van Der Zwan, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.