Surface-passivated high-resistivity silicon substrates for RFICs

IEEE Electron Device Letters

Volumn 25, Issue 4, 2004, Pages 176-178

  Rong, B ^a   Burghartz, J N ^a   Nanver, L K ^a   Rejaei, B ^a   Van Der Zwan, M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Attenuation; Conductivity; Coplanar waveguides; Dielectric losses; Eddy currents; Excimer lasers; HF receivers; HF transmitters; High frequency (HF) measurements; Inductors; Integrated circuit doping; Loss measurement; Losses; Lossless circuits; Magnetic fields; Microwave circuits; Microwave technology; Mobile communication; Monolithic microwave integrated circuits (MMICs); Q factor; Scattering parameters; Semiconductor device fabrication; Semiconductor materials; Silicon; Transmission lines

Indexed keywords

AMORPHOUS SILICON; ATTENUATION; CAPACITORS; DIELECTRIC LOSSES; ELECTRIC INDUCTORS; EXCIMER LASERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; WAVEGUIDES;

HIGH-RESISTIVITY SILICON; INTEGRATED CIRCUIT DOPING; RADIO FREQUENCY INTEGRATED CIRCUITS; TRANSMITTING ELECTRON MICROSCOPE;

SEMICONDUCTING SILICON;

EID: 1942488266     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826295     Document Type: Letter

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