Origin of hysteresis in the transfer characteristic of carbon nanotube field effect transistor

Journal of Physics D: Applied Physics

Volumn 44, Issue 28, 2011, Pages

  Ong, H G ^a   Cheah, J W ^a   Zou, X ^a   Li, B ^b   Cao, X H ^a   Tantang, H ^a   Li, L J ^c   Zhang, H ^a   Han, G C ^d   Wang, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^d DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DATA RETENTION; DYNAMIC SCREENING; ELECTROSTATIC FORCE MICROSCOPY; MEMORY APPLICATIONS; STEP-BY-STEP; STORAGE DENSITIES; TEMPERATURE DEPENDENT; TRANSFER CHARACTERISTICS;

CARBON NANOTUBES; DIRECT INJECTION; ELECTRIC FORCE MICROSCOPY; ELECTROSTATIC FORCE; HYSTERESIS; SILICON COMPOUNDS; SURFACE CHEMISTRY;

FIELD EFFECT TRANSISTORS;

EID: 79960240910     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/28/285301     Document Type: Article

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