Study of charge diffusion at the carbon nanotube-SiO2 interface by electrostatic force microscopy

Journal of Physical Chemistry C

Volumn 113, Issue 35, 2009, Pages 15476-15479

  He, Yingran ^a   Ong, Hock Guan ^b   Zhao, Yang ^b   He, Sailing ^a   Li, Lain Jong ^b   Wang, Junling ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CHARGE DIFFUSION; CRITICAL TEMPERATURES; DIELECTRIC INTERFACE; ELECTROSTATIC FORCE MICROSCOPES; ELECTROSTATIC FORCE MICROSCOPY; ELECTROSTATIC INTERACTIONS; FITTING RESULTS; HYSTERESIS BEHAVIOR; NUMERICAL SIMULATION; TRANSFER CHARACTERISTICS;

ACTIVATION ENERGY; COMPUTER SIMULATION; DIFFUSION; ELECTROSTATIC DEVICES; ELECTROSTATIC FORCE; FIELD EFFECT TRANSISTORS; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE DIFFUSION;

CARBON NANOTUBES;

EID: 70349151719     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp905779f     Document Type: Article

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