Optical properties of a-plane InGaN/GaN multiple quantum wells grown on nanorod lateral overgrowth templates

IEEE Journal of Quantum Electronics

Volumn 47, Issue 8, 2011, Pages 1101-1106

  Huang, Huei Min ^a   Ling, Shih Chun ^a   Chan, Wei Wen ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A plane; InGaN GaN multiple quantum wells; internal quantum efficiency; nanorod lateral epitaxial overgrowth

Indexed keywords

A-PLANE; AS-GROWN; CRYSTAL QUALITIES; EPITAXIAL LATERAL OVERGROWTH; EXCITATION POWER; GAN TEMPLATE; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LATERAL OVERGROWTH; NON-RADIATIVE; PL EMISSION; PL QUANTUM EFFICIENCY; POWER INDICES; QUANTUM CONFINED STARK EFFECT; RADIATIVE EFFICIENCY; SHOCKLEY-READ-HALL; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL ACTIVATION ENERGIES;

ACTIVATION ENERGY; EPITAXIAL GROWTH; GALLIUM NITRIDE; NANORODS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960145449     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2158632     Document Type: Article

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