Electronic behavior of rare-earth dopants in AlN: A density-functional study

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 7, 2005, Pages

  Petit, S ^a,d   Jones, R ^a   Shaw, M J ^b   Briddon, P R ^b   Hourahine, B ^c   Frauenheim, T ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF PADERBORN   (Germany)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749233642     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.073205     Document Type: Article

References (28)

1. D. Prezzi, T. A. G. Eberlein, J. S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. Åberg, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69. 193202 69, 193202 (2004).
2. J. Coutinho, R. Jones, M. J. Shaw, P. R. Briddon, and S. Åberg, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1668323 84, 1683 (2004).
3. J. S. Filhol, R. Jones, M. J. Shaw, and P. R. Briddon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1710710 84, 2841 (2004).
4. D. S. Lee, J. Heikenfeld, A. J. Steckl, U. Hömmerich, J. T. Seo, A. Braud, and J. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1390480 79, 719 (2001).
5. S. Kim, S. J. Rhee, X. Li, J. J. Coleman, and S. G. Bishop, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126358 76, 2403 (2000).
6. X. Wu, U. Hömmerich, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, R. G. Wilson, R. N. Schwartz, and J. M. Zavada, J. Lumin. JLUMA8 0022-2313 72-74, 284 (1997).
7. F. Lu, R. Carius, A. Alam, M. Heuken, A. Rizzi, and C. Buchal, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(02)01111-2 425, 171 (2003).
8. U. Hömmerich, E. E. Nyein, D. S. Lee, A. J. Steckl, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1631742 83, 4556 (2003).
9. Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, and H. Itoh, Phys. Status Solidi B PSSBBD 0370-1972 240, 372 (2003).
10. Y. Nakanishi, A. Wakahara, H. Okada, A. Yoshida, T. Ohshima, H. Itoh, T. Shibata, and M. Tanaka, Phys. Status Solidi C 1610-1634 0, 2623 (2003).
11. F. Lu, A. Rizzi, and R. Carius, Chin. Phys. Lett. CPLEEU 0256-307X 10.1088/0256-307X/19/12/331 19, 1844 (2002).
12. U. Vetter, J. Zenneck, and H. Hofsäss, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1605237 83, 2145 (2003).
13. K. Lorenz, E. Alves, T. Monteiro, M. J. Soares, M. Peres, and P. J. M. Smulders, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X (to be published).
14. C. Hartwigsen, S. Goedecker, and J. Hutter, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.3641 58, 3641 (1998).
15. H. J. Monkhorst and J. D. Pack, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.13.5188 13, 5188 (1976).
16. C. Stampfl and C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.5521 59, 5521 (1999).
17. C. D. Latham, R. M. Nieminen, C. J. Fall, R. Jones, S. Åberg, and P. R. Briddon, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.205206 67, 205206 (2003).
18. F. Litimein, B. Bouhafs, Z. Dridi, and P. Ruterana, New J. Phys. NJOPFM 1367-2630 10.1088/1367-2630/4/1/364 4, 64 (2002).
19. R. Zeisel, M. W. Bayerl, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, and M. Stutzmann, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.R16283 61, R16283 (2000).
20. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1616199 83, 2787 (2003).
21. P. Boguslawski and J. Bernholc, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.56.9496 56, 9496 (1997).
22. C. H. Park and D. J. Chadi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.55.12995 55, 12995 (1997).
23. C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.57. R2033 57, R2033 (1998).
24. G. A. Slack, L. J. Schowalter, D. Morelli, and J. A. Freitas, Jr., J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(02)01753-0 246, 287 (2002).
25. B. Berzina, L. Trinkler, J. Sils, and K. Atobe, Radiat. Eff. Defects Solids REDSEI 1042-0150 157, 1089 (2002).
26. A. Fara, F. Bernardini, and V. Fiorentini, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369197 85, 2001 (1999).
27. B. Szûcs, A. Gali, Z. Hajnal, P. Deák, and C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.085202 68, 085202 (2003).
28. H. Ofuchi, T. Kubo, M. Tabuchi, K. Takahei, and Y. Takeda, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(99)00535-3 51, 715 (2000).