Bias-temperature stress of Al on porous low-k dielectrics

Microelectronics Reliability

Volumn 51, Issue 8, 2011, Pages 1342-1345

  He, Ming ^a   Li, Huafang ^a   Wang, Pei I ^a   Lu, Toh Ming ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-IONS; BIAS-TEMPERATURE STRESS; ELECTRONIC TRAPS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; LOW K DIELECTRICS; POOLE-FRENKEL CONDUCTION; POROUS LOW-K DIELECTRICS; RELIABILITY TEST;

CAPACITORS; DIELECTRIC FILMS; SPECTROSCOPIC ANALYSIS; X RAY SPECTROSCOPY;

ALUMINUM;

EID: 79959871748     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.03.004     Document Type: Article

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