Effect of growth pressure of undoped GaN layer on the ESD characteristics of GaN-based LEDs grown on patterned sapphire

IEEE Photonics Technology Letters

Volumn 23, Issue 14, 2011, Pages 968-970

  Jang, C H ^a   Sheu, J K ^a   Chang, S J ^a   Lee, M L ^b   Yang, C C ^a   Tu, S J ^a   Huang, F W ^a   Hsu, C K ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Electrostatic discharge (ESD); GaN; patterned sapphire substrates (PSS)

Indexed keywords

CRYSTAL PLANES; ELECTRICAL PERFORMANCE; ESD ENDURANCE; FORWARD VOLTAGE; GAN; GAN BASED LED; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; GROWTH PRESSURE; LEAKAGE PATHS; LIGHT OUTPUT; LOW PRESSURES; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE; SIGNIFICANT SURFACES;

COALESCENCE; DURABILITY; ELECTRIC PROPERTIES; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GALLIUM ALLOYS; ORGANIC LIGHT EMITTING DIODES (OLED); PRESSURE EFFECTS; SAPPHIRE;

GALLIUM NITRIDE;

EID: 79959710462     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2148196     Document Type: Article

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