Characterization of porous cubic silicon carbide deposited with Pd and Pt nanoparticles as a hydrogen sensor

Sensors and Actuators, B: Chemical

Volumn 157, Issue 2, 2011, Pages 482-487

  Kim, Kang San ^a   Chung, Gwiy Sang ^a  

^a University of Ulsan   (South Korea)

Author keywords

Anodization; Hydrogen sensor; Porous 3C SiC; Room temperature

Indexed keywords

3C-SIC FILMS; ANODIZATIONS; CHEMICALLY MODIFIED; CUBIC SILICON CARBIDE; ELECTRICAL RESISTANCES; ELECTROCHEMICAL ANODIZATIONS; ELECTROLYTE SOLUTIONS; HIGH TEMPERATURE; HYDROGEN CATALYSTS; HYDROGEN CONCENTRATION; HYDROGEN SENSOR; HYDROGEN-SENSING; PD CATALYST; POLYCRYSTALLINE; PORE DIAMETERS; POROUS 3C-SIC; PT NANOPARTICLES; RECOVERY PROPERTIES; RESPONSE FACTOR; ROOM TEMPERATURE;

CATALYSTS; ELECTROLYTES; EPITAXIAL GROWTH; ETHANOL; HYDROFLUORIC ACID; NANOPARTICLES; PLATINUM; POROUS SILICON; SENSORS; SILICON CARBIDE;

HYDROGEN;

EID: 79959681119     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.05.004     Document Type: Article

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