The sensing performance of hydrogen gas sensor utilizing undoped-AlGaN/GaN HEMT

Journal of Applied Sciences

Volumn 10, Issue 16, 2010, Pages 1797-1801

  Mohamad, Mazuina ^a   Mustafa, Farahiyah ^a   Abd Rahman, Shaharin Fadzli ^a   Abidin, Mastura Shafinaz Zainal ^a   Al Obaidi, Nihad K Ali ^a   Hashim, Abdul Manaf ^a   Aziz, Azlan Abdul ^b   Hashim, Md Roslan ^b  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b SCHOOL OF PHYSICS   (Malaysia)

Author keywords

AlGaN GaN; Gas sensor; HEMT; Hydrogen; Schottky diode

Indexed keywords

CHEMICAL SENSORS; GALLIUM NITRIDE; GAS DETECTORS; GASES; HIGH TEMPERATURE OPERATIONS; HYDROGEN; PLATINUM; SCHOTTKY BARRIER DIODES;

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ELECTRON BEAM EVAPORATION; HYDROGEN GAS SENSORS; LONG TERM STABILITY; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SENSING PERFORMANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954829826     PISSN: 18125654     EISSN: 18125662     Source Type: Journal    
DOI: 10.3923/jas.2010.1797.1801     Document Type: Article

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