Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer

Surface and Coatings Technology

Volumn 205, Issue 21-22, 2011, Pages 5009-5013

  Jeong, Seong Jun ^a   Shin, Yu Ri ^b   Kwack, Won Sub ^b   Lee, Hyung Woo ^b   Jeong, Young Keun ^b   Kim, Doo In ^b   Kim, Hyun Chang ^c   Kwon, Se Hun ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Pusan National University   (South Korea)

^c R and D Center   (South Korea)

Author keywords

Adhesion layer; Cu interconnection; Iridium

Indexed keywords

ADHESION LAYER; CRYSTALLINITIES; CU FILMS; CU LAYERS; CU(1 1 1); DIFFUSION BARRIER METALS; LATTICE MISFITS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PREFERENTIAL ORIENTATION; ROOT-MEAN-SQUARED; SEED LAYER;

ADHESION; ATOMIC LAYER DEPOSITION; COPPER; DEPOSITION; FILM PREPARATION; PLASMA DEPOSITION; SURFACE PROPERTIES; SURFACE ROUGHNESS; TANTALUM COMPOUNDS;

IRIDIUM;

EID: 79959515258     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.04.094     Document Type: Article

References (18)

1. Gutmann R.J., Chow T.P., Kaloyeros A.E., Lanford W.A., Muraka S.P. Thin Solid Film 1995, 262:177.
2. Lee Y.J., Suh B.S., Kwon M.S., Park C.O. J. Appl. Phys. 1999, 85:1927.
3. Kwon S.H., Kwon O.K., Kim J.H., Oh H.R., Kim K.H., Kang S.W. J. Electrochem. Soc. 2008, 155:H296.
4. Kaufman F.B., Thompson D.B., Broadie R.E., Jaso M.A., Guthrie W.L., Pearson D.J., Small M.B. J. Electrochem. Soc. 1991, 138:3460.
5. Kwon O.K., Kwon S.H., Park H.S., Kang S.W. Electrochem. Solid State Lett. 2004, 7:C46.
6. Kim H., Bhandari H.B., Xu S., Gordon R.G. J. Electrochem. Soc. 2008, 155:H496.
7. Kwon O.K., Kim J.H., Park H.S., Kang S.W. J. Electrochem. Soc. 2004, 151:G109.
8. Kwak D.K., Lee H.B., Han J.W., Kang S.W. Electrochem. Solid State Lett. 2006, 9:C171.
9. Hwang E.S., Lee J.H. J. Vac. Sci. Technol. B 1998, 16:3015.
10. Hara T., Yoshida Y., Toida H. Electrochem. Solid State Lett. 2002, 5:G36.
11. Furuya A., Tsuda H., Ogawa S. J. Vac. Sci. Technol. B 2005, 23:979.
12. Kim H., Kojima Y., Sato H., Yoshii N., Hosaka S., Shimogaki Y. Jpn. J. Appl. Phys. 2006, 45:L233. Part 2.
13. Li Z., Rahtu A., Gordon R.G. J. Electrochem. Soc. 2006, 153:C787.
14. Abe K., Harada Y., Onoda H. Proceedings of the 36th IEEE International Reliability Physics Symposium, Reno 1998, 342.
15. Damayanti M., Sritharan T., Gan Z.H., Mhaisalkar S.G., Jiang N., Chan L. J. Electrochem. Soc. 2006, 153:J41.
16. Kim S.W., Kwon S.H., Jeong S.J., Park J.S., Kang S.W. Electrochem. Solid State Lett. 2008, 11:H303.
17. Hong J.W., Choi K.I., Lee Y.K., Park S.G., Lee S.W., Lee J.M., Kang S.B., Choi G.H., Kim S.T., Chung U.I., Moon J.T. Proceedings of the IEEE 2004 International Interconnect Technology Conference, San Francisco 2004, 9.
18. Kim K.H., Yoon J.S., Kim Y.M., Kwon S.H. ECS Trans. 2009, 25:301.