Metalorganic chemical vapor deposition of copper on ruthenium thin film

Electrochemical and Solid-State Letters

Volumn 9, Issue 10, 2006, Pages

  Kwak, Dong Kee ^a   Lee, Hyun Bae ^b   Han, Jae Won ^c   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Dongbu Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRODEPOSITION; RUTHENIUM; SURFACE ROUGHNESS; THIN FILMS; WETTING;

HEXAFLUOROACETYLACETONATE COPPER; INCUBATION TIME; NUCLEI DENSITY; THREE-DIMENSIONAL CU GROWTH;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 33747701620     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2256983     Document Type: Article

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