Plasma-enhanced atomic layer deposition of Ta(C)N thin films for copper diffusion barrier

ECS Transactions

Volumn 25, Issue 4, 2009, Pages 301-308

  Kim, K H ^a   Jeong, S J ^b   Yoon, J S ^a   Kim, Y M ^a   Kwon, S H ^a  

^a Pusan National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; COPPER; COPPER COMPOUNDS; CRYSTALLINITY; DIFFUSION BARRIERS; HYDROGEN; LATTICE MISMATCH; METALLIC FILMS; SEMICONDUCTOR QUANTUM WELLS; THIN FILMS;

ACTIVE HYDROGENS; ALKYL GROUPS; COPPER DIFFUSION BARRIER; CU DIFFUSION BARRIER; DIMETHYLAMIDO; HYDROGEN PLASMAS; PLASMA POWER; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION;

TANTALUM COMPOUNDS;

EID: 74249093324     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3205064     Document Type: Conference Paper

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