Characteristics of a 10nm-thick (TiVCr)N multi-component diffusion barrier layer with high diffusion resistance for Cu interconnects

Surface and Coatings Technology

Volumn 205, Issue 21-22, 2011, Pages 5064-5067

  Tsai, Du Cheng ^a   Huang, Yen Lin ^a   Lin, Sheng Ru ^a   Jung, De Ru ^a   Chang, Shou Yi ^a   Chang, Zue Chin ^b   Deng, Min Jen ^a,c   Shieu, Fuh Sheng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHIN YI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c JEN TEH JUNIOR COLLEGE OF MEDICINE   (Taiwan)

Author keywords

Diffusion barrier; Metallization; Thermal stability

Indexed keywords

BARRIER PROPERTIES; COPPER METALLIZATION; CU ATOMS; CU METALLIZATION; CU-INTERCONNECTS; DIFFUSION BEHAVIOR; DIFFUSION RESISTANCE; EFFECTIVE DIFFUSION; ELECTRICAL RESISTANCES; METALLIC ELEMENTS; MULTI-COMPONENT DIFFUSION; SI SUBSTRATES; TEMPERATURE RANGE; THERMAL-ANNEALING;

ANNEALING; COPPER; METALLIC COMPOUNDS; METALLIC FILMS; METALLIZING; NITRIDES; REFRACTORY METALS; SILICIDES;

DIFFUSION BARRIERS;

EID: 79959509050     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.05.007     Document Type: Article

References (23)

1. Maraka S.P., Gutmann R.J., Kaloyeros A.E., Lanford W.A. Thin Solid Films 1993, 236:257.
2. Gupta D. Mater. Chem. Phys. 1995, 41:199.
3. Liu C.S., Chen L.J. J. Appl. Phys. 1993, 74:5501.
4. Chuang J.C., Chen M.C. Thin Solid Films 1998, 335:146.
5. Kim D.H., Cho S.L., Kim K.B., Kim J.J., Park J.W., Kim J.J. Appl. Phys. Lett. 1996, 69:4182.
6. Chuang J.C., Chen M.C. J. Electrochem. Soc. 1998, 145:4029.
7. Kouno T., Niwa H., Yamada M. J. Electrochem. Soc. 1998, 145:2164.
8. Min K.H., Chun K.C., Kim K.B. J. Vac. Sci. Technol. B 1996, 14:3263.
9. Oku T., Kawakami E., Uecubo M., Takahiro K., Yamaguchi S., Murakami M. Appl. Surf. Sci. 1996, 99:265.
10. Hübner R. Advanced Ta-based diffusion barriers for Cu interconnects 2008, Nova Science Publishers.
11. Qingxiang W., Shuhua L., Xianhui W., Zhikang F. Vacuum 2010, 84:1270.
12. Leu L.C., Norton D.P., White L.M., Anderson T.J. Appl. Phys. A 2009, 94:691.
13. Wang Y., Cao F., Yang X.D., Ding M.H. Mater. Chem. Phys. 2009, 117:425.
14. Majumder P., Takoudis C. J. Electrochem. Soc. 2008, 155:H703.
15. Majumder P., Takoudis C.G. Appl. Phys. Lett 2007, 91:162108.
16. Zhao B., Sun K., Song Z., Yang J. Appl. Surf. Sci. 2010, 256:6003.
17. Wang Y., Cao F., Liu Y.T., Ding M.H. Appl. Phys. Lett. 2008, 92:032108.
18. Zhou J.C., Li Y.Z., Huang D.H. J. Mater. Process. Technol. 2009, 209:774.
19. Xie Q., Jiang Y.L., Musschoot J., Deduytsche D., Detavernier C., Meirhaeghe R.L.V., Berghe S.V.D., Ru G.P., Li B.Z., Qu X.P. Thin Solid Films 2009, 517:4689.
20. Leu L.C., Norton D.P., White L.M., Anderson T.J. Appl. Phys. Lett 2008, 92:111917.
21. Tsai D.C., Huang Y.L., Lin S.R., Jung D.R., Chang S.Y., Shieu F.S., Alloys J. Compd. 2011, 509:3141.
22. Tsai D.C., Huang Y.L., Lin S.R., Jung D.R., Shieu F.S. Appl. Surf. Sci. 2011, 257:3969.
23. Tsai D.C., Huang Y.L., Lin S.R., Jung D.R., Chang S.Y., Shieu F.S. Appl. Surf. Sci. 2011, 257:4923.