Fabrication and diffusion barrier properties of nanoscale Ta/Ta-N bi-layer

Journal of Materials Processing Technology

Volumn 209, Issue 2, 2009, Pages 774-778

  Zhou, Ji cheng ^a   Li, You zhen ^a   Huang, Di hui ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

Author keywords

Cu interconnection; Failure mechanism; RTA; Ta Ta N diffusion barrier

Indexed keywords

ATOMIC PHYSICS; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC RESISTANCE; INTEGRATED CIRCUITS; METALLIC FILMS; MICROSCOPES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; TANTALUM; ULSI CIRCUITS; X RAY ANALYSIS;

ADHESION STRENGTHS; ATOMIC FORCE MICROSCOPES; BARRIER PERFORMANCES; CU ATOMS; CU FILMS; CU INTERCONNECTION; CU METALLIZATION; DC MAGNETRON REACTIVE SPUTTERING; DIFFUSION BARRIER PROPERTIES; DIFFUSION PROPERTIES; FAILURE MECHANISM; HIGHER TEMPERATURES; N FILMS; NANOSCALE; RTA; RTA PROCESSES; SCANNING ELECTRON MICROSCOPES; SMOOTH SURFACES; TA/TA-N DIFFUSION BARRIER; THERMAL STABILITIES; THIN-FILMS; ULTRA LARGE SCALE INTEGRATED; X-RAY DIFFRACTIONS;

COPPER;

EID: 58149167041     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2008.02.077     Document Type: Article

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