Low-frequency noise characteristics of AlGaAs/InGaAs pseudomorphic HEMTs

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1318-1322

  Mizutani, T ^a   Yamamoto, M ^a   Kishimoto, S ^a   Maezawa, K ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Arrhennus plot; DX center; HEMT; Lorentz noise; Low frequency noise

Indexed keywords

ACTIVATION ENERGY; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

ALUMINUM GALLIUM ARSENIDE; ARRHENIUS PLOT; LORENTZ NOISE; LOW-FREQUENCY NOISE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035484927     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

1. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
2. dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor
3. 1-xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
4. 0.7As HEMT on GaAs substrate
5. max of 350 GHz
6. First high performance InAlAs/InGaAs HEMTs on GaAs exceeding that on InP
7. 1-x/2As buffer layer
8. 1-xAs heterostructures
9. 1/f noise in MODFET's at low drain bias
10. Trap studies in GaInP/GaAs and AlGaAs/GaAs HEM's by means of low-frequency noise and transconductance dispersion characterization
11. 1-yAs/GaAs high electron mobility transistors
12. 1-x/2As buffer
13. Deep electron traps in MBE-grown AlGaAs ternary alloy for heterojunction devices
14. Deep donor levels (DX centers) in III-V semiconductors
15. On the noise spectra of semi-conductor noise and of flicker effect