Single-electron stochastic resonance using Si nanowire transistors

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Nishiguchi, Katsuhiko ^a   Fujiwara, Akira ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FAST OPERATION; INPUT AND OUTPUTS; INPUT SIGNAL; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; NANO SCALE; NONLINEAR CHARACTERISTICS; OUTPUT SIGNAL; SI NANOWIRE; SIMPLE SYSTEM; SINGLE ELECTRON; STOCHASTIC RESONANCES; STORAGE NODES;

CIRCUIT RESONANCE; MAGNETIC RESONANCE; MOSFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON; SHOT NOISE; STATIC RANDOM ACCESS STORAGE; STOCHASTIC SYSTEMS; TRANSISTORS;

SINGLE ELECTRON TRANSISTORS;

EID: 79959472574     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GF04     Document Type: Article

References (23)

1. M. J. Madou and R. Cubicciotti: Proc. IEEE 91 (2003) 830.
2. M. H. Devoret and R. J. Schoelkopf: Nature 406 (2000) 1039.
3. A. Fujiwara, K. Yamazaki, and Y. Takahashi: Appl. Phys. Lett. 80 (2002) 4567.
4. K. Nishiguchi, C. Koechlin, Y. Ono, A. Fujiwara, H. Inokawa, and H. Yamaguchi: Jpn. J. Appl. Phys. 47 (2008) 8305.
5. A. Fujiwara and Y. Takahashi: Nature 410 (2001) 560.
6. K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi: Appl. Phys. Lett. 90 (2007) 223108.
7. K. Nishiguchi, H. Inokawa, Y. Ono, A. Fujiwara, and Y. Takahashi: Appl. Phys. Lett. 85 (2004) 1277.
8. K. Nishiguchi, A. Fujiwara, Y. Ono, H. Inokawa, and Y. Takahashi: Appl. Phys. Lett. 88 (2006) 183101.
9. K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi: Appl. Phys. Lett. 92 (2008) 062105.
10. K. Nishiguchi and A. Fujiwara: Nanotechnology 20 (2009) 175201.
11. L. Gammaitoni, P. Hänggi, P. Jung, and F. Marchesoni: Rev. Mod. Phys. 70 (1998) 223.
12. R. Benzi, S. Sutera, and A. Vulpiani: J. Phys. A 14 (1981) L453.
13. J. K. Douglass, L. Wilkens, E. Pantazelou, and F. Moss: Nature 365 (1993) 337.
14. E. Simonotto, M. Riani, C. Seife, M. Roberts, J. Twitty, and F. Moss: Phys. Rev. Lett. 78 (1997) 1186.
15. F. Duan and D. Abbott: Physica A 376 (2007) 173.
16. S. Fauve and F. Heslot: Phys. Lett. A 97 (1983) 5.
17. A. D. Hibbs, A. L. Singsaas, E. W. Jacobs, A. R. Bulsara, J. J. Bekkedahl, and F. Moss: J. Appl. Phys. 77 (1995) 2582.
18. S. Kasai and T. Asai: Appl. Phys. Express 1 (2008) 083001.
19. S. Kasai, K. Miura, and Y. Shiratori: Appl. Phys. Lett. 96 (2010) 194102.
20. J. J. Collins, C. C. Chow, and T. T. Imhoff: Nature 376 (1995) 236.
21. International Technology Roadmap for Semiconductors 2009. Available at http://www.itrs.net/
22. Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatsu, K. Kurihara, and K. Murase: Jpn. J. Appl. Phys. 38 (1999) 2457.
23. Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe: Electron. Lett. 31 (1995) 136.