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Volumn 410, Issue 6828, 2001, Pages 560-562
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Manipulation of elementary charge in a silicon charge-coupled device
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE COUPLED DEVICES;
ELECTRON TUNNELING;
FABRICATION;
LSI CIRCUITS;
MOSFET DEVICES;
NETWORKS (CIRCUITS);
SILICON;
CONDUCTIVE ISLANDS;
ELECTRIC CHARGE;
OXIDE;
SILICON;
ARTICLE;
DEVICE;
ELECTRIC POTENTIAL;
ELECTRON TRANSPORT;
ELECTRONICS;
ELEMENTARY PARTICLE;
INTEGRATED CIRCUIT;
PRIORITY JOURNAL;
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EID: 0035967129
PISSN: 00280836
EISSN: None
Source Type: Journal
DOI: 10.1038/35069023 Document Type: Article |
Times cited : (84)
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References (30)
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