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Volumn 410, Issue 6828, 2001, Pages 560-562

Manipulation of elementary charge in a silicon charge-coupled device

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON TUNNELING; FABRICATION; LSI CIRCUITS; MOSFET DEVICES; NETWORKS (CIRCUITS); SILICON;

EID: 0035967129     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/35069023     Document Type: Article
Times cited : (84)

References (30)
  • 8
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    • Individual single-wall carbon nanotubes as quantum wires
    • (1997) Nature , vol.386 , pp. 474-476
    • Tans, S.J.1
  • 16
    • 0029206925 scopus 로고
    • Fabrication technique for Si single-electron transistor operating at room temperature
    • (1995) Electron. Lett. , vol.31 , pp. 136-137
    • Takahashi, Y.1
  • 22
    • 44949283527 scopus 로고
    • Single electron pump fabricated with ultrasmall normal tunnel junctions
    • (1991) Physica B , vol.169 , pp. 573-574
    • Pothier, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.