The correlation between electric field emission phenomenon and Schottky contact reverse bias characteristics in nanostructured systems

Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

  Yu, J ^a   Liu, J ^b   Breedon, M ^a   Shafiei, M ^a   Wen, H ^c   Li, Y X ^c   Wlodarski, W ^a   Zhang, G ^b   Kalantar Zadeh, K ^a  

^a RMIT UNIVERSITY   (Australia)

^b PEKING UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD ENHANCEMENT; ENHANCEMENT FACTOR; FIELD EMISSION PROPERTY; I - V CURVE; NANOSTRUCTURED SYSTEMS; NANOTEXTURED; REVERSE BIAS; REVERSE BREAKDOWN VOLTAGE; SCHOTTKY CONTACTS; THIN LAYERS;

ELECTRIC FIELDS; FIELD EMISSION; MOLYBDENUM; MOLYBDENUM OXIDE; PLATINUM; THERMAL EVAPORATION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79959411443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3583658     Document Type: Article

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