Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 2, 2008, Pages 119-123

  McNeill, D W ^a   Bhattacharya, S ^a   Wadsworth, H ^a   Ruddell, F H ^a   Mitchell, S J N ^a   Armstrong, B M ^a   Gamble, H S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDE DIELECTRICS; HAFNIUM OXIDE FILMS; POST-DEPOSITION ANNEALING;

ANNEALING; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; OXIDE FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES;

HAFNIUM COMPOUNDS;

EID: 38549136833     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9337-y     Document Type: Conference Paper

References (2)

1. C.O. Chui et al., Elect. Dev. Lett. 25, 274 (2004)
2. N. Wu et al., Appl. Phys. Lett. 84, 3741 (2004)