On the magnitude of random telegraph noise in ultra-scaled MOSFETs

2011 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2011

Volumn , Issue , 2011, Pages

  Cheung, K P ^a   Campbell, J P ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSION LAYER; MOSFETS; RANDOM DOPANT EFFECTS; RANDOM TELEGRAPH NOISE; SCALED DEVICES;

INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUITS;

TELEGRAPH;

EID: 79959349893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICICDT.2011.5783191     Document Type: Conference Paper

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