Yield and reliability of Cu capped with CoWP using a self-activated process

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 30-32

  Gambino, J ^a   Wynne, J ^a   Gill, J ^a   Mongeon, S ^a   Meatyard, D ^a   Bamnolker, H ^b   Hall, L ^b   Li, N ^b   Hernandez, M ^b   Little, P ^b   Hamed, M ^b   Ivanov, I ^b  

^a IBM MICROELECTRONICS   (United States)

^b Blue29 LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU INTERCONNECTS; HIGH FIELDS; HIGH STRESS; HIGH VOLTAGES; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; METAL RESISTANCES; STRESS MIGRATION LIFETIME; VIA RESISTANCE;

COPPER; COPPER ALLOYS; LEAKAGE CURRENTS; METALS; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; STRESS ANALYSIS; TECHNOLOGY;

COBALT COMPOUNDS;

EID: 50249182955     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648637     Document Type: Conference Paper

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