CVD cobalt as an enhancement layer to improve Cu/low-k interconnect performance

Advanced Metallization Conference (AMC)

Volumn , Issue , 2010, Pages 199-200

  Lee, Hyun Bae ^a   Matsuda, Tsukasa ^a   Kang, Ju Ho ^a   Jung, Hye Kyung ^a   Hong, Jong Won ^a   Yun, Jong Ho ^a   Park, Ji Soon ^a   Lee, Jong Myeong ^a   Park, In Sun ^a   Choi, Gil Heyun ^a   Choi, Siyoung ^a   Chung, Chilhee ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERFORMANCE; ENHANCEMENT LAYERS; IMPROVED RELIABILITY; INTERCONNECT PERFORMANCE; THIN-FILM CHARACTERIZATION;

METALLIZING;

COBALT;

EID: 79957635856     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. N.Kumar et al., Semiconductor International 31 (2008) 26.
2. Laureen Carbonell et al., International Interconnect Technology Conference (2009) 200.
3. J. Lu et al., Advanced Metallization Conference (2008) 21.