Integration and reliability of CVD Ru Cap for Cu/Low-k development

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 255-257

  Yang, C C ^a   Edelstein, D ^c   Chanda, K ^b   Wang, P ^b   Hu, C K ^c   Liniger, E ^c   Cohen, S ^c   Lloyd, J R ^c   Li, B ^d   McFeely, F ^c   Wisnieff, R ^c   Ishizaka, T ^e   Cerio, F ^e   Suzuki, K ^e   Rullan, J ^e   Selsley, A ^e   Jomen, M ^e  

^a IBM   (United States)

^b IBM RESEARCH   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d IBM MICROELECTRONICS   (United States)

^e TEL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAP DEPOSITION; CU-INTERCONNECTS; ELECTRICAL PERFORMANCE; TECHNOLOGY NODES; TIME DEPENDENT DIELECTRIC BREAKDOWN; VOLTAGE RAMP;

DIELECTRIC MATERIALS; OPTICAL INTERCONNECTS;

CHEMICAL VAPOR DEPOSITION;

EID: 70349439267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090402     Document Type: Conference Paper

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