Analysis of Al doping effects on resistivity and electromigration of copper interconnects

IEEE Transactions on Device and Materials Reliability

Volumn 8, Issue 1, 2008, Pages 216-220

  Yokogawa, Shinji ^a   Tsuchiya, Hideaki ^a   Kakuhara, Yumi ^a   Kikuta, Kuniko ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Copper alloys; Electromigration (EM); Reliability; Resistivity

Indexed keywords

ALUMINUM; CONCENTRATION (PROCESS); COPPER ALLOYS; ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; RELIABILITY ANALYSIS; SEMICONDUCTOR DOPING;

IMPURITY-SCATTERING FACTORS; SCATTERING MODEL;

ELECTRIC POWER SYSTEM INTERCONNECTION;

EID: 40549131930     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.915003     Document Type: Article

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