메뉴 건너뛰기




Volumn 7640, Issue , 2010, Pages

Evaluation of lithographic benefits of using ILT techniques for 22nm-node

Author keywords

assist feature (AF); computational lithography; Inverse Lithography Technologies (ILT); mask optimization (MO); Source Mask Optimization (SMO); source optimization (SO)

Indexed keywords

MASKS;

EID: 79959228403     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.848479     Document Type: Conference Paper
Times cited : (12)

References (10)
  • 10
    • 42149178602 scopus 로고    scopus 로고
    • Inverse Lithography Technology keep the balance between SRAF and MRC at 45 &32 nm
    • Pang, L.Y., Liu, Y., Dam, T., Mihic, K., Cecil, K., and Abrams, D., "Inverse Lithography Technology keep the balance between SRAF and MRC at 45 &32 nm", SPIE Bacus, [6730-212] (2007)
    • (2007) SPIE Bacus , pp. 6730-7212
    • Pang, L.Y.1    Liu, Y.2    Dam, T.3    Mihic, K.4    Cecil, K.5    Abrams, D.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.