Fine calibration of physical resist models: The importance of Jones pupil, laser bandwidth, mask error and CD metrology for accurate modeling at advanced lithographic nodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7973, Issue , 2011, Pages

  Moon, Seongho ^a   Yang, Seunghune ^a   Shamsuarov, Artem ^a   Kim, Eunju ^a   Ser, Junghoon ^a   Kim, Youngchang ^a   Choi, Seongwoon ^a   Kang, Changjin ^a   Klostermann, Ulrich ^b   Küchler, Bernd ^b   Lewellen, John ^c   Schmöller, Thomas ^b   Lee, Sooryong ^c  

^a SAMSUNG Electronics   (South Korea)

^b Synopsys GmbH   (Germany)

^c SYNOPSYS INC   (United States)

Author keywords

Lithography simulation; OPC; Resist model calibration; Resist model validation; Sentaurus lithography

Indexed keywords

LITHOGRAPHY SIMULATION; OPC; RESIST MODEL CALIBRATION; RESIST MODELS; SENTAURUS LITHOGRAPHY;

BANDWIDTH; COMPUTER SIMULATION; LITHOGRAPHY; MODELS; NANOTECHNOLOGY; UNITS OF MEASUREMENT;

CALIBRATION;

EID: 79959209202     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879592     Document Type: Conference Paper

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