Calibration of physical resist models: Methods, usability, and predictive power

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7273, Issue , 2009, Pages

  Klostermann, U K ^a   Mulders T ^a   Ponomarenco, D ^a   Schmoller T ^a   Van De Kerkhove, J ^b   De Bisschop, P ^b  

^a Synopsys GmbH   (Germany)

^b IMEC   (Belgium)

Author keywords

Lithography simulation; OPC; Resist model calibration; Resist model validation; Sentaurus lithography

Indexed keywords

LITHOGRAPHY SIMULATION; OPC; RESIST MODEL CALIBRATION; RESIST MODEL VALIDATION; SENTAURUS LITHOGRAPHY;

CALIBRATION; LITHOGRAPHY; MODEL STRUCTURES; SIMULATORS;

THREE DIMENSIONAL;

EID: 65849520896     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814216     Document Type: Conference Paper

References (6)

1. Kamohara, I. and Schmoeller, T., "Split, overlap/stitching and process design for double patterning considering local reflectivity variation by using rigorous 3D wafer-topography/lithography simulation," Proc. SPIE 7274-16 (2009)
2. Siebert, J., Brooker, P., Schmoeller, T. and Klimpel, T., "Analysis of topographic effects on lithographic performance in double-patterning applications," Proc. SPIE 7274-21 (2009)
3. Schmoeller, T. and Klimpel, T., "EUV Pattern Shift Compensation Strategies," Proc. SPIE Vol.6921, 6921 IB, (2008)
4. Brooker, P. and Zavyalova, L., "Understanding characteristic EUV image variation in full-field exposure tools," Solid State Technology, Nov. 2008, in www.microlithographyworld.com
5. Sentaurus Lithography is a commercial software package for lithography process simulation; a prototype implementation of model calibration functionality was used within the context of this paper; general availability of all features is planned with release C-2009.06
6. De Bisschop, P., Muelders, T., Klostermann, U., Schmöller, T., Biafore, J., Robertson, S., Smith M., "Impact of mask 3D effects on resist-model calibration", submitted as JM3 Letter, (2009)