Forming-free CuC-buffer oxide resistive switching behavior with improved resistance ratio

Electrochemical and Solid-State Letters

Volumn 14, Issue 8, 2011, Pages

  Kim, Seonghyun ^a   Jo, Minseok ^a   Park, Jubong ^a   Lee, Joonmyoung ^a   Lee, Wootae ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; CU ATOMS; FPGA APPLICATIONS; ON/OFF RATIO; RESISTANCE RATIO; RESISTANCE VALUES; RESISTIVE SWITCHING BEHAVIORS; ULTRA-THIN;

PLATINUM;

SWITCHING SYSTEMS;

EID: 79959207523     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3591363     Document Type: Article

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