Reliability of nanoelectromechanical nonvolatile memory (NEMory) cells

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 269-271

  Choi, Woo Young ^a   Liu, Tsu Jae King ^b  

^a Sogang University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Nanoelectromechanical nonvolatile memory (NEMory); Reliability

Indexed keywords

DURABILITY;

AMBIENT CONDITIONS; BEAM DESIGNS; DC VOLTAGES; NANOELECTROMECHANICAL NONVOLATILE MEMORY (NEMORY); NONVOLATILE MEMORY CELLS; PROGRAM/ERASE; RETENTION TIME;

RELIABILITY;

EID: 62549131194     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010879     Document Type: Article

References (5)

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