Boron doping: B/H/C/O gas-phase chemistry; H atom density dependences on pressure and wire temperature; Puzzles regarding the gas-surface mechanism

Thin Solid Films

Volumn 519, Issue 14, 2011, Pages 4421-4425

  Mankelevich, Yuri A ^a   Ashfold, Michael N R ^b   Comerford, Dane W ^b   Ma, Jie ^b   Richley, James C ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Boron doped diamond; Deposition process; Hot filament CVD; Modeling

Indexed keywords

AIR IMPURITIES; B ATOMS; BORON DOPED DIAMOND; BORON-DOPING; DEPOSITION PROCESS; GAS PHASE CHEMISTRY; GAS PRESSURES; H-ATOM DENSITY; HEAT AND MASS TRANSFER; HOT FILAMENT; HOT WIRES; HOT-FILAMENT CVD; MODELING STUDIES; NEAR-WALL REGION; PROCESS GAS; PRODUCTION RATES; REACTION MODEL; WIRE TEMPERATURE;

ATOMS; BORON; DIAMOND FILMS; DIAMONDS; GAS MIXTURES; MASS TRANSFER; MIXTURES; SEMICONDUCTOR DOPING; SURFACE REACTIONS; WIRE PRODUCTS;

GASES;

EID: 79958799252     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.328     Document Type: Conference Paper

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