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Volumn 17, Issue 7-10, 2008, Pages 1320-1323
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Synthesis of boron-doped homoepitaxial single crystal diamond by microwave plasma chemical vapor deposition
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Author keywords
Diamond film; Electrical conductivity; p Type doping; Plasma CVD
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Indexed keywords
ABSORPTION;
ABSORPTION SPECTROSCOPY;
BORON;
BORON COMPOUNDS;
CARBON NANOTUBES;
DIAMOND DEPOSITS;
DIAMONDS;
ELECTRIC CONDUCTIVITY;
EXPERIMENTS;
GAS ABSORPTION;
HYDROGEN;
METHANATION;
METHANE;
MICROWAVES;
NONMETALS;
OPTICAL CONDUCTIVITY;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
POWDERS;
PULSED LASER DEPOSITION;
SINGLE CRYSTALS;
SUBSTRATES;
SYNTHESIS (CHEMICAL);
VAPORS;
BORON-DOPED;
DEPOSITION CONDITIONS;
DEPOSITION SYSTEMS;
DIAMOND FILM;
DIAMOND GROWTH;
DIBORANE;
ELECTRICAL CONDUCTIVITY;
GROWTH RATES;
HIGH-QUALITY;
HOMOEPITAXIAL;
HYDROGEN GAS MIXTURE;
METHANE CONCENTRATIONS;
MICROWAVE PLASMA;
MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;
MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION;
OPTICAL ABSORPTION;
P-TYPE DOPING;
PLASMA CVD;
SINGLE CRYSTAL DIAMOND;
SUBSTRATE TEMPERATURE;
CHEMICAL VAPOR DEPOSITION;
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EID: 48849086059
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2008.01.120 Document Type: Article |
Times cited : (19)
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References (10)
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