High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 281-284

  Lecourt, F ^a   Douvry, Y ^a   Defrance, N ^a   Hoel, V ^a   De Jaeger, J C ^a   Bouzid, S ^b   Renvoise, M ^b   Smith, D ^b   Maher, H ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b OMMIC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER THICKNESS; CURRENT GAIN CUTOFF FREQUENCY; GATE LENGTH; HIGH-RESISTIVITY SILICON SUBSTRATE; MICROWAVE POWER; PEAK EXTRINSIC TRANSCONDUCTANCE; POWER GAINS; SI(111) SUBSTRATE; THIN BARRIERS;

CUTOFF FREQUENCY; DC POWER TRANSMISSION; ELECTRON MOBILITY; GALLIUM NITRIDE; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SOLID STATE DEVICES; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78649944141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618362     Document Type: Conference Paper

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