SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 3, 2011, Pages

Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

(10) Lo, Chien Fong a Kang, T S a Liu, L a Ren, F a Pearton, S J a Kim, Jinhyung b Jang, S b Laboutin, O c Cao, Y c Johnson, J W c

a University of Florida (United States)

b Dankook University (South Korea)

c KOPIN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; GALLIUM NITRIDE; ION BOMBARDMENT; IONS; NITROGEN PLASMA; PASSIVATION; SILICON NITRIDE;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DRAIN DISTANCE; EXPERIMENT DATA; GENERAL TRENDS; ION IMPLANTED; PASSIVATION LAYER; RF-POWER; SATURATION DRAIN CURRENT; SILICON NITRIDE PASSIVATION; SIMULATED RESULTS; SINX THICKNESS; SURFACE BREAKDOWN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79958113058 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3593002 Document Type: Article

Times cited : (13)

References (17)

1
- 0033907629
- High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
- DOI 10.1049/el:20000352
- N. X. Nguyen, M. Micovic, W. -S. Wong, P. Hashimoto, L. -M. McCray, P. Janke, and C. Nguyen, Electron. Lett. 0013-5194 36, 468 (2000). 10.1049/el:20000352 (Pubitemid 30559617)
- (2000) Electronics Letters , vol.36 , Issue.5 , pp. 468-469
- Nguyen, N.X.¹ Micovic, M.² Wong, W.-S.³ Hashimoto, P.⁴ McCray, L.-M.⁵ Janke, P.⁶ Nguyen, C.⁷

2
- 0005985130
- 0021-8979, 10.1063/1.371145
- S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 0021-8979 86, 1 (1999). 10.1063/1.371145
- (1999) J. Appl. Phys. , vol.86 , pp. 1
- Pearton, S.J.¹ Zolper, J.C.² Shul, R.J.³ Ren, F.⁴

3
- 0035545658
- Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
- DOI 10.1016/S0038-1101(01)00255-6, PII S0038110101002556
- J. W. Johnson, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, F. Ren, S. J. Pearton, A. M. Dabiran, A. M. Wowchack, C. J. Polley, and P. P. Chow, Solid-State Electron. 0038-1101 45, 1979 (2001). 10.1016/S0038-1101(01)00255-6 (Pubitemid 33024403)
- (2001) Solid-State Electronics , vol.45 , Issue.12 , pp. 1979-1985
- Johnson, J.W.¹ Baca, A.G.² Briggs, R.D.³ Shul, R.J.⁴ Wendt, J.R.⁵ Monier, C.⁶ Ren, F.⁷ Pearton, S.J.⁸ Dabiran, A.M.⁹ Wowchack, A.M.¹⁰ Polley, C.J.¹¹ Chow, P.P.¹²

4
- 0032595863
- 0741-3106, 10.1109/55.784448
- I. Daumiller, C. Kirchner, M. Kamp, K. J. Ebeling, and E. Kohn, IEEE Electron Device Lett. 0741-3106 20, 448 (1999). 10.1109/55.784448
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 448
- Daumiller, I.¹ Kirchner, C.² Kamp, M.³ Ebeling, K.J.⁴ Kohn, E.⁵

5
- 0033738001
- 0741-3106, 10.1109/55.843146
- B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Lett. 0741-3106 21, 268 (2000). 10.1109/55.843146
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 268
- Green, B.M.¹ Chu, K.K.² Chumbes, E.M.³ Smart, J.A.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

6
- 0035886086
- 0003-6951, 10.1063/1.1412282
- G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 0003-6951 79, 2651 (2001). 10.1063/1.1412282
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2651
- Simin, G.¹ Koudymov, A.² Tarakji, A.³ Hu, X.⁴ Yang, J.⁵ Asif Khan, M.⁶ Shur, M.S.⁷ Gaska, R.⁸

7
- 0036864577
- Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
- DOI 10.1149/1.1512675
- B. Luo, R. Mehandru, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo, and Y. Irokawa, J. Electrochem. Soc. 0013-4651 149, G613 (2002). 10.1149/1.1512675 (Pubitemid 35457976)
- (2002) Journal of the Electrochemical Society , vol.149 , Issue.11
- Luo, B.¹ Mehandru, R.² Kim, J.³ Ren, F.⁴ Gila, B.P.⁵ Onstine, A.H.⁶ Abernathy, C.R.⁷ Pearton, S.J.⁸ Fitch, R.⁹ Gillespie, J.¹⁰ Jenkins, T.¹¹ Sewell, J.¹² Via, D.¹³ Crespo, A.¹⁴ Irokawa, Y.¹⁵

8
- 0035278795
- Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
- DOI 10.1109/16.906429, PII S0018938301014460
- E. M. Chumbes, J. A. Smart, T. Prunty, and J. R. Shealy, IEEE Trans. Electron Devices 0018-9383 48, 416 (2001). 10.1109/16.906429 (Pubitemid 32271155)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.3 , pp. 416-419
- Chumbes, E.M.¹ Smart, J.A.² Prunty, T.³ Shealy, J.R.⁴

9
- 79955997504
- 3 passivation on AlGaN/GaN high-electron-mobility transistors
- DOI 10.1063/1.1455692
- B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, and J. Han, Appl. Phys. Lett. 0003-6951 80, 1661 (2002). 10.1063/1.1455692 (Pubitemid 34268864)
- (2002) Applied Physics Letters , vol.80 , Issue.9 , pp. 1661
- Luo, B.¹ Johnson, J.W.² Kim, J.³ Mehandru, R.M.⁴ Ren, F.⁵ Gila, B.P.⁶ Onstine, A.H.⁷ Abernathy, C.R.⁸ Pearton, S.J.⁹ Baca, A.G.¹⁰ Briggs, R.D.¹¹ Shul, R.J.¹² Monier, C.¹³ Han, J.¹⁴

10
- 0035914883
- 10.1063/1.1418452
- P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Appl. Phys. Lett. 79, 3527 (2001). 10.1063/1.1418452
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3527
- Klein, P.B.¹ Binari, S.C.² Ikossi, K.³ Wickenden, A.E.⁴ Koleske, D.D.⁵ Henry, R.L.⁶

11
- 0347778608
- 0361-5235.
- A. P. Zhang, L. B. Rowland, E. B. Kamensky, V. Tilak, J. C. Grande, J. Feetsov, A. Vatiakhikh, and L. F. Eastman, J. Electron. Mater. 0361-5235 32, 626 (2003).
- (2003) J. Electron. Mater. , vol.32 , pp. 626
- Zhang, A.P.¹ Rowland, L.B.² Kamensky, E.B.³ Tilak, V.⁴ Grande, J.C.⁵ Feetsov, J.⁶ Vatiakhikh, A.⁷ Eastman, L.F.⁸

12
- 78650892694
- 0003-6951, 10.1063/1.3533381
- C. F. Lo T. S. Kang, C. Y. Chang, S. J. Peaton, I. I. Kravchenko, O. Laboutin, J. W. Johnson, and F. Ren, Appl. Phys. Lett. 0003-6951 97, 262116 (2010). 10.1063/1.3533381
- (2010) Appl. Phys. Lett. , vol.97 , pp. 262116
- Lo, C.F.¹ Kang, T.S.² Chang, C.Y.³ Peaton, S.J.⁴ Kravchenko, I.I.⁵ Laboutin, O.⁶ Johnson, J.W.⁷ Ren, F.⁸

13
- 0033101253
- 0018-9383, 10.1109/16.748864
- T. Kimoto, N. Miyamoto, and H. Matsunami, IEEE Trans. Electron Devices 0018-9383 46, 471 (1999). 10.1109/16.748864
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 471
- Kimoto, T.¹ Miyamoto, N.² Matsunami, H.³

14
- 0033097597
- 0018-9383, 10.1109/16.748866
- P. G. Neudeck and C. Fazi, IEEE Trans. Electron Devices 0018-9383 46, 485 (1999). 10.1109/16.748866
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 485
- Neudeck, P.G.¹ Fazi, C.²

15
- 0028743399
- 0281-1847, 10.1088/0031-8949/1994/T54/015
- L. P. Ramberg, S. Savage, U. Gustafsson, and A. Schöner, Phys. Scr., T 0281-1847 T54, 65 (1994). 10.1088/0031-8949/1994/T54/015
- (1994) Phys. Scr., T , vol.54 , pp. 65
- Ramberg, L.P.¹ Savage, S.² Gustafsson, U.³ Schöner, A.⁴

16
- 1642335994
- (World Scientific Pub Co. Inc., River Edge, NJ). 10.1142/9789812796882
- F. Ren and J. C. Zolper, Wide Energy Bandgap Electronic Devices (World Scientific Pub Co. Inc., River Edge, NJ, 2003). 10.1142/9789812796882
- (2003) Wide Energy Bandgap Electronic Devices
- Ren, F.¹ Zolper, J.C.²

17
- 0023438107
- Electrical properties of thin pecvd silicon oxynitride films
- DOI 10.1016/0169-4332(87)90094-8
- L. Do Thanh, V. Exner, and P. Balk, Appl. Surf. Sci. 0169-4332 30, 204 (1987). 10.1016/0169-4332(87)90094-8 (Pubitemid 18538427)
- (1987) Applied Surface Science , vol.30 , Issue.1-4 , pp. 204-209
- Do Thanh, L.¹ Exner, V.² Balk, P.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.