Ultra-thin semiconductor membrane nanotechnology based on surface charge lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8068, Issue , 2011, Pages

  Tiginyanu, Ion ^a   Popa, Veaceslav ^b   Stevens Kalceff, Marion A ^c  

^a INSTITUTE OF CHEMISTRY   (Moldova)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

GaN; Ion beam treatment; Nanostructuring; Photoelectrochemical etching; Surface charge lithography; Ultra thin membranes

Indexed keywords

GAN; ION BEAM TREATMENT; NANO-STRUCTURING; PHOTO-ELECTROCHEMICAL ETCHING; SURFACE CHARGE LITHOGRAPHY; ULTRA-THIN MEMBRANES;

CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; GALLIUM NITRIDE; ION BEAMS; MECHANICAL STABILITY; MEMBRANES; NANOTECHNOLOGY;

ELECTROCHEMICAL ETCHING;

EID: 79958070738     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.890125     Document Type: Conference Paper

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