Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; Transparency, flexibility, and nano-scale memory feasibility

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1143-1147

  Jung, Seungjae ^a   Kong, Jaemin ^a   Song, Sunghoon ^a   Lee, Kwanghee ^a   Lee, Takhee ^a   Hwang, Hyunsang ^a   Jeon, Sanghun ^a,b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Flexible; Nano scale; ReRAM; Resistive switching; Sol gel; Solution process; Titanium oxide; Transparent; Via hole

Indexed keywords

FLEXIBLE; NANO SCALE; RERAM; RESISTIVE SWITCHING; SOLUTION-PROCESS; TRANSPARENT; VIA-HOLE;

COATINGS; ETHERS; GELS; ITO GLASS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SOL-GELS; SOLS; SUBSTRATES; SWITCHING SYSTEMS; TIN; TITANIUM; TITANIUM OXIDES;

SOL-GEL PROCESS;

EID: 79958059258     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.054     Document Type: Conference Paper

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