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Volumn 88, Issue 7, 2011, Pages 1070-1075

III-V nMOSFETs - Some issues associated with roadmap worthiness (invited)

(10) Thayne, Iain a Bentley, Steven a Holland, Martin a Jansen, Wout a Li, Xu a MacIntyre, Douglas a Thoms, Stephen a Shin, Byungha b Ahn, Jaesoo b McIntyre, Paul b

a UNIVERSITY OF GLASGOW (United Kingdom)

b Stanford University (United States)

Author keywords

III V MOSFETs

Indexed keywords

CHANNEL MATERIALS; CONTACT FORMATION; DEVICE ARCHITECTURES; EFFECTIVE MASS; HIGH ELECTRON MOBILITY; HIGH QUALITY; HIGH VELOCITY; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; INTERVALLEY SCATTERING; MOSFETS; NMOSFET; NMOSFETS; PERFORMANCE METRICS; ROADMAP; SEMICONDUCTOR INTERFACES; SUPPLY VOLTAGES;

ELECTRON MOBILITY; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS;

MOSFET DEVICES;

EID: 79958028291 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.100 Document Type: Conference Paper

Times cited : (10)

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