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Volumn 519, Issue 17, 2011, Pages 5730-5733

Effect of the composition on the bandgap width of high-κ Me xTiyOz (Me = Hf, Ta, Sr) layers

(11) Wang, W C a Badylevich, M a Afanas'Ev, V V a Stesmans, A a Popovici, M b Tomida, K b Menou, N b Kittl, J A b Lukosius, M c Baristiran Kaynak, C c Wenger, Ch c

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

c IHP (Germany)

Author keywords

Bandgap; HfxTiyOz; Photoconductivity; SrxTiyOz; Ta2Ti 3Oz

Indexed keywords

BAND GAP ENGINEERING; BAND GAP WIDTH; BAND GAPS; ELECTRON STATE; GAP WIDTHS; HFXTIYOZ; OPTICAL ABSORPTION; POLYCRYSTALLINE; SRXTIYOZ; SUB-NETWORK; TA2TI 3OZ; TIO; TITANATE FILMS; WIDE GAP;

AMORPHOUS MATERIALS; ENERGY GAP; HAFNIUM OXIDES; OXIDE FILMS; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; POSITIVE IONS; TITANIUM DIOXIDE;

HAFNIUM;

EID: 79958016365 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.02.008 Document Type: Conference Paper

Times cited : (3)

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