Advanced residual stress analysis and FEM simulation on heteroepitaxial 3CSiC for MEMS application

Journal of Microelectromechanical Systems

Volumn 20, Issue 3, 2011, Pages 745-752

  Anzalone, R ^a   D'Arrigo, G ^a   Camarda, M ^a   Locke, C ^b   Saddow, S E ^b   La Via, F ^a  

^a CNR   (Italy)

^b University of South Florida   (United States)

Author keywords

Heteroepitaxial 3CSiC; microelectromechanical systems (MEMS) application; simulation analysis; stress analysis

Indexed keywords

3C-SIC FILMS; CANDIDATE MATERIALS; CHARACTERIZATION STUDIES; DEFECT EVOLUTION; DEFECT FORMATION; EXPERIMENTAL DATA; EXPONENTIAL APPROXIMATIONS; FEM SIMULATIONS; FILM DEFECTS; FREE-STANDING STRUCTURES; HETEROEPITAXIAL; HETEROEPITAXIAL THIN FILMS; LINEAR STRESS; MEMS APPLICATIONS; MICRO-ELECTRO-MECHANICAL; MICROELECTROMECHANICAL SYSTEMS; MICROMACHINED; NANO ELECTROMECHANICAL SYSTEMS; RELAXATION MECHANISM; SI SUBSTRATES; SIMULATION ANALYSIS; SIMULATION DATA; TWO-COMPONENT; UNIFORM STRESS;

COMPOSITE MICROMECHANICS; DEFECTS; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM THICKNESS; MEMS; MICROELECTROMECHANICAL DEVICES; RESIDUAL STRESSES; SILICON CARBIDE; STRESS ANALYSIS; STRESS RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

FINITE ELEMENT METHOD;

EID: 79957981952     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2011.2127451     Document Type: Article

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