Low stress heteroepitaxial 3C-SiC films characterized by microstructure fabrication and finite elements analysis

Journal of the Electrochemical Society

Volumn 157, Issue 4, 2010, Pages

  Anzalone, R ^a,b   Camarda, M ^a   Locke, C ^c   Alquier, D ^d   Severino, A ^a   Italia, M ^a   Rodilosso, D ^e   Tringali, C ^e   La Magna, A ^a   Foti, G ^b   Saddow, S E ^c   La Via, F ^a   D'Arrigo, G ^a  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c University of South Florida   (United States)

^d UNIVERSITÉ DE TOURS   (France)

^e STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; CANTILEVER STRUCTURES; CARBON SUPPLY; FINITE ELEMENT SIMULATIONS; FINITE ELEMENTS ANALYSIS; GAS CARRIERS; HETEROEPITAXIAL; HIGH QUALITY; LOW PRESSURES; LOW STRESS; MICROSTRUCTURE FABRICATION; OPTICAL PROFILOMETER; RESIDUAL GRADIENT; SI FILMS; SIC EPILAYERS; SIC/SI INTERFACE; SILICON (100); STRESS FIELD;

ATOMIC FORCE MICROSCOPY; NANOCANTILEVERS; PROPANE; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949760351     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3298872     Document Type: Article

References (16)

1. L. Moreno Real, R. Polas Tormo, M. Martinez Lara, and S. Bruque, MRS Bull. 0883-7694, 22, 19 (1987). 10.1016/0025-5408(87)90145-0
2. P. M. Sarro, Sens. Actuators, A 0924-4247, 210, 82 (2000).
3. M. Reyes, Y. Shishkin, S. Harvey, and S. E. Saddow, in Spring Materials Research Society Meeting Proceedings, p. 911 (2006).
4. A. Severino, G. D'Arrigo, C. Bongiorno, S. Scalese, G. Foti, and F. La Via, J. Appl. Phys. 0021-8979, 102, 023518 (2007). 10.1063/1.2756620
5. C. Coletti, S. E. Saddow, C. L. Frewin, M. Hetzel, C. Virojanadara, and U. Starke, Appl. Phys. Lett. 0003-6951, 91, 061914 (2007). 10.1063/1.2768870
6. R. Anzalone, A. Severino, C. Locke, D. Rodilosso, C. Tringali, S. E. Saddow, F. La Via, and G. D'Arrigo, Adv. Sci. Technol (Faenza, Italy), 411-415, 54 (2008).
7. B. D. Cullity, Elements of X-Ray Diffraction, 2nd ed., p. 284, Addison-Wesley, Reading, MA (1978).
8. R. Anzalone, A. Severino, G. D'Arrigo, C. Bongiorno, G. Abbondanza, G. Foti, S. E. Saddow, and F. La Via, J. Appl. Phys. 0021-8979, 105, 084910 (2009). 10.1063/1.3095462
9. A. Severino, C. Frewin, C. Bongiorno, R. Anzalone, S. E. Saddow, and F. La Via, Diamond Relat. Mater. 0925-9635, 18, 1440 (2009). 10.1016/j.diamond. 2009.09.012
10. W. Fang, C. H. Lee, and H. H. Hu, J. Micromech. Microeng. 0960-1317, 236, 9 (1999).
11. C. -K. Chung, T. -Y. Lin, J. -G. Duh, and M. -Q. Tsai, Surf. Coat. Technol. 0257-8972, 200, 4825 (2006). 10.1016/j.surfcoat.2005.04.048
12. M. Zielinski, A. Leycuras, S. Ndiaye, and T. Chassagne, Appl. Phys. Lett. 0003-6951, 89, 131906 (2006). 10.1063/1.2357569
13. L. D. Landau and E. M. Lifsits, Teoria dell'Elasticit̀, Vol. 116, Mir, Rome (1979).
14. K. Tu, J. Mayer, L. Feldman, Electronic Thin Film Science, pp. 84-88, Macmillan, NY, (1992).
15. S. N. G. Chu, J. Electrochem. Soc. 0013-4651, 145, 3621 (1998). 10.1149/1.1838853
16. S. Rohmfeld, M. Hundhausen, L. Ley, C. A. Zorman, and M. Mehregany, J. Appl. Phys. 0021-8979, 91, 1113 (2002). 10.1063/1.1427408