Line width roughness control and pattern collapse solutions for EUV patterning

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7969, Issue , 2011, Pages

  Petrillo, Karen ^a   Huang, George ^a   Ashworth, Dominic ^a   Georger, Jacque ^a   Ren, Liping ^a   Cho, K Y ^a   Montgomery, Warren ^a   Wurm, Stefan ^a   Kawakami, Shinichiro ^b   Dunn, Shannon ^c   Ko, Akiteryu ^b  

^a SEMATECH   (United States)

^b TEL TECHNOLOGY CENTER   (United States)

^c TOKYO ELECTRON AMERICA INC   (United States)

Author keywords

Extreme ultraviolet lithography (EUVL); Line width roughness (LWR); Pattern Collapse

Indexed keywords

ARF IMMERSION LITHOGRAPHY; COMBINED TECHNIQUES; CRITICAL ISSUES; DEVELOPMENT ACTIVITY; EXTREME ULTRAVIOLET; LEADING EDGE; LINEWIDTH ROUGHNESS; PATTERN COLLAPSE; RESIST PATTERNING; TRACK-BASED;

ASPECT RATIO; EXTREME ULTRAVIOLET LITHOGRAPHY; LITHOGRAPHY;

ROUGHNESS MEASUREMENT;

EID: 79957949217     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.879513     Document Type: Conference Paper

References (12)

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