LWR reduction by novel lithographic and etch techniques

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Kobayashi, Shinji ^a   Shimura, Satoru ^a   Kawasaki, Tetsu ^a   Nafus, Kathleen ^a   Hatakeyama, Shinichi ^a   Shite, Hideo ^a   Nishimura, Eiichi ^a   Kushibiki, Masato ^a   Hara, Arisa ^a   Gronheid, Roel ^b   Vaglio Pret, Alessandro ^b   Kitano, Junichi ^a  

^a TOKYO ELECTRON LTD   (Japan)

^b IMEC   (Belgium)

Author keywords

ArF immersion; extreme ultraviolet; line edge roughness; LWR reduction; resist smoothing process

Indexed keywords

CRITICAL ISSUES; EUV LITHOGRAPHY; EXTREME ULTRAVIOLET; ILLUMINATION CONDITIONS; LINE EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; POST-DEVELOPMENT; REDUCING EFFECTS; REDUCTION TECHNIQUES; RESIST MATERIALS; RESIST PATTERN; SMOOTHING PROCESS;

PHOTORESISTS;

ROUGHNESS MEASUREMENT;

EID: 77953516573     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846318     Document Type: Conference Paper

References (4)

1. International Technology Roadmap for Semiconductor, 2009, http://www.itrs.net/Links/2009ITRS/2009 Chapters-2009Tables/2009-Litho.pdf.
2. Rathsack, B., Nafus, K., Hatakeyama, S., Kuwahara, Y., Kitano, J., Gronheid, R., "Resist fundamentals for resolution, LER and sensitivity (RLS) performance tradeoffs and their relation to micro-bridging defects", Proc. SPIE 7273, 7273471 (2009).
3. Inatomi, Y., Kawasaki, T., Iwashita, M., "LWR Reduction in ArF Resist pattern by Resist smoothing process", Proc. SPIE 6153, 615331 (2006).
4. Matsunaga, K., Oori, T., Kato, H., Kawamura, D., Shiobara, E., Inatomi, Y., Kawasaki, T., Iwashita, M, Ito, S., "LWR Reduction in low k1 ArF immersion lithography", Proc. SPIE 6923, 69231E (2008).