Study of post-develop defect on typical EUV resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Harumoto, Masahiko ^a   Shigemori, Kazuhito ^a   Hisai, Akihiro ^a   Asai, Masaya ^a   Kaneyama, Koji ^b  

^a Sokudo Co Ltd   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Develop defect; EUV; TBAH developer

Indexed keywords

DEFECT GENERATION; DEFECT TYPE; DEVELOP DEFECT; DEVELOPMENT PHASE; EUV RESISTS; EXPOSURE TOOL; RESIST IMPROVEMENT; TETRABUTYL;

AMMONIUM COMPOUNDS; EXPOSURE METERS; KRYPTON;

DEFECTS;

EID: 77953409440     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846546     Document Type: Conference Paper

References (6)

1. M.Harumoto, et. al., 2009 Int. Symposium on EUVL, P095.
2. K.Matsunaga, 2009 Int. Symposium on EUVL, O-R2-02.
3. Y. Tanaka, et. al., Proc. SPIE, 7271, 7271-137 (2009).
4. H. Oizumi, et. al., Proc. SPIE, 7273, 7273-111 (2009).
5. S. Magoshi, et. al., Proc. SPIE, 7273, 7273-116 (2009).
6. M.Harumoto, et. al, Proc. SPIE, 7273, 7273-71 (2009).