Effects of Si3N4 passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures

Semiconductor Science and Technology

Volumn 24, Issue 2, 2009, Pages

  Oh, J H ^a   Han, M ^a   Baek, Y H ^a   Moon, S W ^a   Rhee, J K ^a   Kim, S D ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CONTROL MODELS; CHARGED SURFACE STATE; COMPARATIVE STUDIES; CUT-OFF FREQUENCIES; DC AND RF CHARACTERISTICS; DRAIN-SOURCE SATURATION CURRENTS; EXPERIMENTAL MEASUREMENTS; EXTRINSIC TRANSCONDUCTANCES; GATE STRUCTURES; HYDRODYNAMIC DEVICES; INDUCED DEGRADATIONS; MAXIMUM FREQUENCY OF OSCILLATIONS; PARASITIC CAPACITANCES; SURFACE STATE;

CHARGED PARTICLES; DEGRADATION; DRAIN CURRENT; FLUID DYNAMICS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON;

PASSIVATION;

EID: 65549133359     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/2/025027     Document Type: Article

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