Optimization of Urea-EnFET based on Ta2O5 layer with post annealing

Sensors

Volumn 11, Issue 5, 2011, Pages 4562-4571

  Lue, Cheng En ^a   Yu, Ting Chun ^a   Yang, Chia Ming ^b   Pijanowska, Dorota G ^c   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b Inotera Memories   (Taiwan)

^c INSTITUTE OF BIOCYBERNETICS AND BIOMEDICAL ENGINEERING   (Poland)

Author keywords

Enzymatic field effect transistor (EnFET); Ion sensitive field effect transistor (ISFET); Post N2 annealing; Tantalum pentoxide (Ta2O5); Urea

Indexed keywords

IMMOBILIZED ENZYME; OXIDE; TANTALUM; TANTALUM OXIDE; UREA; UREASE;

ARTICLE; CHEMISTRY; GENETIC PROCEDURES; METABOLISM; METHODOLOGY; PH; SEMICONDUCTOR;

BIOSENSING TECHNIQUES; ENZYMES, IMMOBILIZED; HYDROGEN-ION CONCENTRATION; OXIDES; TANTALUM; TRANSISTORS, ELECTRONIC; UREA; UREASE;

EID: 79957689725     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s110504562     Document Type: Article

References (26)

1. Caras, S.; Janata, J. Field effect transistor sensitive to penicillin. Anal. Chem. 1980, 52, 1935-1937.
2. Pijanowska, D.G.; Torbicz, W. pH-ISFET based urea biosensor. Sens. Actuat. B 1997, 44, 370-376.
3. Dzyadevich, S.V.; Korpan, Y.I.; Arkhipova, V.N. Application of enzyme field-effect transistors for determination of glucose concentrations in blood serum. Biosens. Bioelectron. 1999, 14, 283-287.
4. Soldatkin, A.P.; Montoriol, J.; Sant, W.; Martelet, C.; Jaffrezic-Renault, N. Creatinine sensitive biosensor based on ISFETs and creatinine deiminase immobilised in BSA membrane. Talanta 2002, 58, 351.
5. Matsuo, T.; Wise, K.D. An integrated field-effect electrode for biopotential recording. IEEE Trans. Biomed. Eng. 1974, 21, 485.
6. 5 and Si3N4 pH-sensing insulators. Sens. Actuat. B 1994, 17, 157-164.
7. 5 membrane in strong acid and alkaline solutions. Sens. Actuat. B 1991, 3, 75-81.
8. 5 sensing membrane for low drift and high sensitivity pH-ISFET. Sens. Actuat. B 1996, 34, 441-445.
9. 5 gate pH-ISFETs. Sens. Actuat. B. 2000, 64, 152-155.
10. 3 gate pH-ISFET. Mater. Chem. Phys. 2001, 71, 120.
11. Shin, P.-K. The pH-sensing and light-induced drift properties of titanium dioxide thin films deposited by MOCVD. Appl. Surf. Sci. 2003, 214, 214-221.
12. 2 pH ion-sensitive field effect transistor made by the sputtering method. Thin Solid Film 2005, 476, 157-161.
13. Lai, C.-S.; Yang, C.-M.; Lu, T.-F. pH sensitivity improvement on 8 nm thick hafnium oxide by post deposition annealing. Electrochem. Solid-State Lett. 2006, 9, G90-G92.
14. van der Wal, P.D.; Briand, D.; Mondin, G.; Jenny, S.; Jeanneret, S.; Millon, C.; Roussel, H.; Dubourdieu, C.; de Rooij, N.F. High-k dielectrics for use as ISFET gate oxides; In Proceedings of IEEE Sensors, Vienna, Austria, 24-27 October 2004; pp. 677-680.
15. Chou, J.C.; Wang, Y.F. Preparation and study on the drift and hysteresis properties of the tin oxide gate ISFET by the sol-gel method. Sens. Actuat. B 2002, 86, 58.
16. 5 membrane. Sens. Actuat. B 1991, 3, 75-81.
17. 5-gate EIS structure. Sens. Actuat. B 2005, 111-112, 423-429.
18. Braeken, D.; Rand, D.R.; Andrei, A.; Huys, R.; Spira, M.E.; Yitzchaik, S.; Shappir, J.; Borghs, G.; Callewaert, G.; Bartic, C. Glutamate sensing with enzyme-modified floating-gate field effect transistors. Biosens. Bioelectron. 2009, 24, 2384.
19. Migita, S.; Ozasa, K.; Ikeno, S.; Tanaka, T.; Haruyama, T. Molecular commonality sensing of phosphoric anhydride substances using an ion-sensitive field-effect transistor covered with an artificial enzyme membrane. Jpn. J. Appl. Phys, Part 1. 2007, 46, 7539.
20. 2-Si structures. Sens. Actuat. 1990, B1, 350-353.
21. Mikolajick, T.; Kühnhold, R.; Ryssel, H. The pH-sensing properties of tantalum pentoxide filmes fabricated by metal organic low pressure chemical vapor depostition. Sens. Actuat. B 1997, 44, 262-267.
22. Dawgul, M.; Pijanowska, D.G.; Krzyskow, A.; Kruk, J.; Torbicz, W. An influence of polyHEMA gate layer on properties of ChemFETs. Sensors 2003, 3, 146-159.
23. Lai, C.-S.; Lue, C.-E.; Yang, C.-M.; Dawgul, M.; Pijanowska, D.G. Optimization of a PVC Membrane for Reference Field Effect Transistors. Sensors 2009, 9, 2076-2087.
24. y membranes prepared by NH3 plasma surface treatment and nitrogen incorporated reactive sputtering. Sens. Actuat. B 2008, 130, 77-81.
25. 4 Plasma and Rapid Thermal Annealing for ISFET/REFET Applications, In International Conference on Solid State Devices and Materials, Yokohama, Japan, 12-15 September 2006; pp. 790-791.
26. Sant, W.; Pourciel, M.L.; Launay, J.; Conto, T.D.; Martinez, A.; Temple-Boyer, P. Development of chemical field effect transistors for detection of urea. Sens. Actuat. B 2004, 95, 309-314.